http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102683270-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2012-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102683270-B |
| titleOfInvention | Method, semi-conductor device manufacturing method and semiconductor devices |
| abstract | A kind of method, semi-conductor device manufacturing method and semiconductor devices.Wherein method, semi-conductor device manufacturing method includes：Being formed on the basal surface and side wall for forming the opening portion on interlayer dielectric and in the field portion on the interlayer dielectric in addition to opening portion includes the seed crystal film of the first metal；Resist is formed on seed crystal film and opening portion is filled with the resist；A part of resist is removed, while being retained in the resist on the seed crystal film formed on the basal surface of opening portion；The seed crystal film that exposure is formed on the top and field portion of the side wall of opening portion；Being formed on seed crystal film on the top positioned at the side wall of opening portion and in the portion of field includes bimetallic cover layer, and the bimetallic resistivity is higher than the resistivity of the first metal；By remove resist and exposed seed epitaxial；And formation includes the plated film of the first metal on exposed seed crystal film. |
| priorityDate | 2011-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.