http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102318037-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2008-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66b27893b6bb424745426e70dd8e87ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_213773bc41a5a5784ada3c2acc14425f |
| publicationDate | 2014-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102318037-B |
| titleOfInvention | CD bias loading control with ARC layer open |
| abstract | A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer. |
| priorityDate | 2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.