http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102280522-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102280522-B |
| titleOfInvention | Form the method for current trace on the semiconductor |
| abstract | Disclose a kind of method manufacturing semi-conductor electricity streak line.Described method is included in selectivity deposition on the silicon dioxide of coating semiconductor or silicon nitride layer and comprises the hot melt printing ink resist of abietic resin and wax, use inorganic acid etching agent subsequently with the part of etching silicon dioxide or the uncoated lid of silicon nitride layer to expose semiconductor, and the lateral erosion of suppression hot melt printing ink resist simultaneously.The part be etched can be metallized to form many basic uniform current trace subsequently. |
| priorityDate | 2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.