| abstract |
The stacked die interconnection structure that the present invention discloses the penetrant structure comprised for wearing silicon through hole and the system and method be associated.According to specific embodiment, a kind of system comprises first Semiconductor substrate with the first backing material and the penetrant structure by described first semiconductor substrate supporting.Described system comprises the second Semiconductor substrate of the second backing material had with preformed recess further.The described penetrant structure of described first Semiconductor substrate to be received in the described recess of described second Semiconductor substrate and to be fastened to described second Semiconductor substrate with described recess mechanical engagement. |