| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_52cd00892a548e92d179344efa0bd3bd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2009-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a386f7ad27b1e275782639f653cdcab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5b08fc00cf81a729a39f8195b616682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3bcda84d413780fafc2c88a42f06ef7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cf39eeae7cabb1f4ed582d9882f0167 |
| publicationDate |
2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-101567314-B |
| titleOfInvention |
Technique for controlling trench profile in semiconductor structures |
| abstract |
A method for forming a semiconductor structure includes the following steps. Trenches are formed in a semiconductor region using a masking layer such that the trenches have a first depth, a first width along their bottom, and sidewalls having a first slope. The masking layer is removed, and a bevel etch is performed to taper the sidewalls of the trenches so that the sidewalls have a second slope less than the first slope. |
| priorityDate |
2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |