| abstract |
The invention provides a kind of semiconductor-on-diamond devices (200) and forming method thereof, provide one and have the mould (220) that an interface surface (212) is mated apparatus surface (210) structure of diamond layer (204) on the contrary, afterwards a passive diamond layer (204) is deposited on the diamond interface surface (212) of mould (220), one basic unit (202) is incorporated on the formation face (222) of this passive diamond layer (204), at least remove the apparatus surface (210) that a part of mould (220) exposes diamond, its structure with mould diamond interface surface is an inverse correspondence mutually, this mould (220) can be formed by suitable semi-conducting material, its further skiving is to make resulting device, optionally, this semi-conducting material can be bonded to this diamond layer (204) after removing mould (220). |