http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100380665-C
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 2005-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13151c9f935b43050bee39477f40787a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4e1cad208f54ce4cff3c906e2d34536 |
| publicationDate | 2008-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-100380665-C |
| titleOfInvention | Ferroelectric memory element and its manufacturing method |
| abstract | The objective of this invention is to provide a ferroelectric memory device and a manufacturing method for the ferroelectric memory device for suppressing a damage arising at an interface of an upper electrode and a ferroelectric substance when manufacturing a capacitor. The ferroelectric memory device includes a substrate 100, a ferroelectric capacitor 130 formed above the substrate 100 and having a lower electrode 120, a ferroelectric film 105 and an upper electrode 106; hydrogen barrier films 107 and 108 arranged to cover the ferroelectric capacitor 130; and an interlayer insulating film 109 provided above the hydrogen barrier films 107 and 108. The film thickness of the part provided above the upper electrode 106 of the hydrogen barrier films 107 and 108 is larger than that of the part arranged on the side wall of the ferroelectric capacitor 130 in the hydrogen barrier films 107 and 108. |
| priorityDate | 2004-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.