| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_353dd2507a2ce33fb9a5d172ccef2de0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_13378daf1ea3e93deba77c21f881e972 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 |
| filingDate |
2014-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec3871a4be96b2286d7a32c7725cd6df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95d7b5522738037487e79cb0a6c97fc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03b285339298c6fca8ea0ea816b7aa77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a943c9c75ad9242694e5a97038a4c0bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f51785dfd82b99c44d14e616e46b8cc8 |
| publicationDate |
2015-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2920490-A1 |
| titleOfInvention |
Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device |
| abstract |
[Problem] To provide: an oxide semiconductor layer with which crack formation is reduced, and which exhibits excellent electrical characteristics and stability; a semiconductor element provided with said oxide semiconductor layer; and an electronic device. [Solution] An oxide-semiconductor-layer production method according to one embodiment of the present invention includes: a precursor-layer formation step in which an oxide semiconductor precursor is formed as a layer upon or above a substrate, said oxide semiconductor precursor being obtained by dispersing, in a solution including a binder comprising an aliphatic polycarbonate, a compound of a metal that will become an oxide semiconductor when oxidized; and a baking step in which the precursor layer is heated at a first temperature that causes the binder to decompose by at least 90 wt%, and subsequently baked at a temperature which is higher than the first temperature, which binds oxygen to the aforementioned metal, and which has an exothermic peak value at at least a second temperature (the temperature indicated by X) in differential thermal analysis (DTA). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107431013-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107431013-B |
| priorityDate |
2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |