http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1160761-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9ec95f75bc5dcc8f2c6f36fd3ee1ca6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1981-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1984-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_200cc638bdf15ccb78504ea9e7260cdc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e49f8d80c48c976518437c132c4452a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bea49db774aed02e92526ded762e5ba9 |
| publicationDate | 1984-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1160761-A |
| titleOfInvention | Fabrication of microminiature devices using plasma etching of silicon and resultant products |
| abstract | FABRICATION OF MICROMIMINATURE DEVICES USING PLASMA ETCHING OF SILICON AND RESULTANT PRODUCTS Abstract of the Disclosure This invention relates to fabrication of microminiature devices, such as integrated circuit utilizing the delination of fine-line patterns in such devices by dry etching processes. By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of doped or undoped monocrystalline silicon and polycrystalline silicon is achieved. The etching processes are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas, the amount of undercutting achieved during the etching process can be selectively controlled. |
| priorityDate | 1980-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.