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Object |
contentType |
Journal Article|Research Support, Non-U.S. Gov't |
endingPage |
806 |
issn |
0304-3894 |
issueIdentifier |
1-3 |
pageRange |
799-806 |
publicationName |
Journal of Hazardous Materials |
startingPage |
799 |
bibliographicCitation |
Karunakaran C, Dhanalakshmi R, Gomathisankar P, Manikandan G. Enhanced phenol-photodegradation by particulate semiconductor mixtures: Interparticle electron-jump. Journal of Hazardous Materials. 2010 Apr 15;176(1-3):799–806. doi: 10.1016/j.jhazmat.2009.11.105. |
creator |
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date |
2010-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
identifier |
https://pubmed.ncbi.nlm.nih.gov/20022165 https://doi.org/10.1016/j.jhazmat.2009.11.105 |
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https://portal.issn.org/resource/ISSN/0304-3894 http://rdf.ncbi.nlm.nih.gov/pubchem/journal/21388 |
language |
English |
source |
https://www.crossref.org/ https://pubmed.ncbi.nlm.nih.gov/ |
title |
Enhanced phenol-photodegradation by particulate semiconductor mixtures: Interparticle electron-jump |
discusses |
http://id.nlm.nih.gov/mesh/M0029379 http://id.nlm.nih.gov/mesh/M0015671 |
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