bibliographicCitation |
Wang S, Zhou Q, Chen K, Bai P, Wang J, Zhu L, Zhou C, Gao W, Zhang B. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range. Materials (Basel). 2022 Jan 15;15(2). PMID: 35057371; PMCID: PMC8778785. |