http://rdf.ncbi.nlm.nih.gov/pubchem/reference/8242586

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contentType Journal Article
issn 1996-1944
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bibliographicCitation Wang S, Zhou Q, Chen K, Bai P, Wang J, Zhu L, Zhou C, Gao W, Zhang B. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range. Materials (Basel). 2022 Jan 15;15(2). PMID: 35057371; PMCID: PMC8778785.
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date 2022-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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title Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

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