http://rdf.ncbi.nlm.nih.gov/pubchem/reference/33067449

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contentType Journal Article
issn 1931-7573
1556-276X
issueIdentifier 1
pageRange 509-
publicationName Nanoscale Research Letters
startingPage 509
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bibliographicCitation Yang F, Chen Y, Feng S, Sun Q, Han J. Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN. Nanoscale Research Letters. 2016 Nov 18;11(1):509. doi: 10.1186/s11671-016-1727-8.
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date 2016-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/PMC5116017
https://pubmed.ncbi.nlm.nih.gov/27864818
https://doi.org/10.1186/s11671-016-1727-8
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language English
source https://pubmed.ncbi.nlm.nih.gov/
https://www.crossref.org/
https://scigraph.springernature.com/
title Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

Total number of triples: 27.