reference/26131021

http://rdf.ncbi.nlm.nih.gov/pubchem/reference/26131021

Outgoing Links

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endingPage	1337
issn	1520-5207 1520-6106
issueIdentifier	3
pageRange	1332-1337
publicationName	The journal of physical chemistry. B
startingPage	1332
bibliographicCitation	Rappich J, Merson A, Roodenko K, Dittrich T, Gensch M, Hinrichs K, Shapira Y. Electronic properties of Si surfaces and side reactions during electrochemical grafting of phenyl layers. J Phys Chem B. 2006 Jan 26;110(3):1332–7. doi: 10.1021/jp0545344. PMID: 16471682.
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date	2005-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier	https://doi.org/10.1021/jp0545344 https://pubmed.ncbi.nlm.nih.gov/16471682
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language	English
source	https://www.crossref.org/ https://pubmed.ncbi.nlm.nih.gov/
title	Electronic Properties of Si Surfaces and Side Reactions during Electrochemical Grafting of Phenyl Layers
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Incoming Links

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Total number of triples: 47.