http://rdf.ncbi.nlm.nih.gov/pubchem/reference/23740513

Outgoing Links

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contentType Journal Article
issn 1613-6810
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issueIdentifier 45
pageRange e2104459-
publicationName Small (Weinheim an der Bergstrasse, Germany)
startingPage e2104459
bibliographicCitation Gao F, Zhang X, Tan B, Zhang S, Zhang J, Jia D, Zhou Y, Hu P. Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /h-BN/Graphene Heterostructure. Small. 2021 Nov;17(45):e2104459. doi: 10.1002/smll.202104459. PMID: 34622561.
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date 2021-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/34622561
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title Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2/h‐BN/Graphene Heterostructure
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Total number of triples: 28.