| Predicate |
Object |
| contentType |
Journal Article |
| endingPage |
221 |
| issn |
1573-4846
0928-0707 |
| issueIdentifier |
2 |
| pageRange |
215-221 |
| publicationName |
Journal of Sol-Gel Science and Technology |
| startingPage |
215 |
| bibliographicCitation |
Lin K, Chen Y. Improvement of electrical properties of sol–gel derived ZnO:Ga films by infrared heating method. Journal of Sol-Gel Science and Technology. 2009 May 01;51(2):215–21. doi: 10.1007/s10971-009-1982-6. |
| creator |
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_5d4eb97c638fe6b5b0620dd97b82fce1
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_c131ef6a16cb8b26aabc3f653366e215 |
| date |
2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| identifier |
https://doi.org/10.1007/s10971-009-1982-6 |
| isPartOf |
https://portal.issn.org/resource/ISSN/0928-0707
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/41352
https://portal.issn.org/resource/ISSN/1573-4846 |
| language |
English |
| source |
https://www.crossref.org/
https://scigraph.springernature.com/ |
| title |
Improvement of electrical properties of sol–gel derived ZnO:Ga films by infrared heating method |