http://rdf.ncbi.nlm.nih.gov/pubchem/reference/208226696

Outgoing Links

Predicate Object
contentType Journal Article
endingPage 5605
issn 1543-186X
0361-5235
issueIdentifier 11
pageRange 5600-5605
publicationName Journal of Electronic Materials
startingPage 5600
bibliographicCitation Wang Y, Jia R, Zhao Y, Li C, Zhang Y. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness. Journal of Electronic Materials. 2016 Jul 11;45(11):5600–5. doi: 10.1007/s11664-016-4760-6.
creator http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_51441eacb1f6409962bc0ef7fee91a7a
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_e99e428b85cd1895e66fdcea025c17aa
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_554053cfcf288438a7babdb1970bca40
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_a8ebb71b472bc0613357cc0a8fdfbf8f
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_cf2114509d5bf366296cafcd5e06bc9f
date 2016-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1007/s11664-016-4760-6
isPartOf https://portal.issn.org/resource/ISSN/1543-186X
https://portal.issn.org/resource/ISSN/0361-5235
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/45479
language English
source https://www.crossref.org/
https://scigraph.springernature.com/
title Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

Total number of triples: 23.