bibliographicCitation |
Wang Y, Jia R, Zhao Y, Li C, Zhang Y. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness. Journal of Electronic Materials. 2016 Jul 11;45(11):5600–5. doi: 10.1007/s11664-016-4760-6. |