http://rdf.ncbi.nlm.nih.gov/pubchem/reference/205626903

Outgoing Links

Predicate Object
contentType Journal Article
endingPage 376
issn 1573-4846
0928-0707
issueIdentifier 3
pageRange 369-376
publicationName Journal of Sol-Gel Science and Technology
startingPage 369
bibliographicCitation Lin K, Chen H, Chen Y, Chou K. Influences of preferred orientation growth on electrical properties of ZnO:Al films by sol–gel method. Journal of Sol-Gel Science and Technology. 2010 May 27;55(3):369–76. doi: 10.1007/s10971-010-2252-3.
creator http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_aafc3db0e8ca7f0425e496ea3691c735
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_5d4eb97c638fe6b5b0620dd97b82fce1
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_c131ef6a16cb8b26aabc3f653366e215
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_00390a744846dcb4fc8237c4e286dd96
date 2010-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1007/s10971-010-2252-3
isPartOf https://portal.issn.org/resource/ISSN/0928-0707
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/41352
https://portal.issn.org/resource/ISSN/1573-4846
language English
source https://www.crossref.org/
https://scigraph.springernature.com/
title Influences of preferred orientation growth on electrical properties of ZnO:Al films by sol–gel method

Total number of triples: 22.