http://rdf.ncbi.nlm.nih.gov/pubchem/reference/202944872

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contentType Journal Article
endingPage 4652
issn 1573-482X
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issueIdentifier 5
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publicationName Journal of Materials Science: Materials in Electronics
startingPage 4647
bibliographicCitation Sen S, Chakraborty N, Rana P, Sahu R, Singh S, Panda AK, Tripathy S, Pradhan DK, Sen A. Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3. Journal of Materials Science: Materials in Electronics. 2016 Jan 21;27(5):4647–52. doi: 10.1007/s10854-016-4342-7.
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date 2016-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1007/s10854-016-4342-7
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language English
source https://www.crossref.org/
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title Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3

Total number of triples: 26.