reference/202268663

Predicate	Object
contentType	Journal Article
endingPage	2133
issn	1573-482X 0957-4522
issueIdentifier	4
pageRange	2127-2133
publicationName	Journal of Materials Science: Materials in Electronics
startingPage	2127
bibliographicCitation	Gao W, Xing W, Yun Q, Chen J, Nie C, Zhao S. The ferroelectric and fatigue behaviors of Dy doped BiFeO3 thin films prepared by chemistry solution deposition. Journal of Materials Science: Materials in Electronics. 2014 Dec 31;26(4):2127–33. doi: 10.1007/s10854-014-2657-9.
creator	http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_c6a718b2c7f792fb3297bbece1a4ccf0 http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0002-3702-9144 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_653dd7b00dd0f28faafe9091d9d53591 http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0003-1793-4128 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_bb530bad5ad88764ee0c10914aa739ce http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_22a6c861f62237d2696bdb4a904439bb
date	2014-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier	https://doi.org/10.1007/s10854-014-2657-9
isPartOf	https://portal.issn.org/resource/ISSN/0957-4522 https://portal.issn.org/resource/ISSN/1573-482X
language	English
source	https://www.crossref.org/ https://scigraph.springernature.com/
title	The ferroelectric and fatigue behaviors of Dy doped BiFeO3 thin films prepared by chemistry solution deposition

Total number of triples: 23.