| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c9c39cdf30d9355a93212bd347260a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d2f1e25040847b1a23bfb04d42e82b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e77b30dcd15d2a95327194dc221c660
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85ecd97d3fa55f0b463ecd98905bd87b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53eaacfff89a05ab10dae30462eca9fa |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N25-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01K19-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N25-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01K19-00 |
| filingDate |
1998-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c858a81cc1e94eb371f79130cb2ae7ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5efed79fda6b2f9f3208e837bdaea223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31d9acaacd338ff94994d0a00a694eec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_425eefe30d86865bc89f3492143e54bc |
| publicationDate |
1999-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9931493-A1 |
| titleOfInvention |
Differential thermoanalysis device |
| abstract |
A differential thermoanalysis device (10) used to examine or determine the parameters of a test sample, especially the phase transition point or specific warmth of the test sample, by means of measurement. The inventive device consists of a heat source (12) and a sensor plate (16) coupled thereto. A test sample coupling zone (18) is arranged on said sensor plate for thermal coupling of a test sample (20), in addition to a reference sample coupling zone (22) for thermal coupling of a reference sample (24) exhibiting a known behaviour with respect to the parameter to be measured or examined. The sensor plate (16) consists of a ceramic or a monocrystalline or polycrystalline thermoelectric semiconductor material, at least inside the test sample and reference sample coupling zones (18, 22). The Seebeck coefficient and temperature development of the semiconductor material can be periodically measured and calculated in order to take the effects of ageing into account. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100344961-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103336024-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103954381-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011060768-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106404228-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106404228-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102713586-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103336024-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103043602-A |
| priorityDate |
1997-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |