| abstract |
New starting materials and methods are used to make materials with low dielectric constant through the processes of transport polymerization or chemical vapor deposition. The starting materials and precursors are designed to provide polymers with combined low dielectric constant, high thermal stability and high mechanical strength. The low dielectric constant products are useful as IMD and ILD for future IC fabrication. These polymers are used for the manufacture of thin films with low dielectric constant, high thermal stability, and mechanical strength sufficiently high to withstand reflow, annealing, planarization, and polishing for the manufacture of integrated circuits, electro-optical devices, and micromechanical devices. |