| abstract |
A liquid precursor containing a metal is applied (87) to a first electrode (28, 58), dried (88, 89) in air at a first temperature of 160 °C and then a second temperature of 260 °C, RTP baked (90) at a temperature of 300 °C in oxygen, RTP baked (91) at a temperature of 650 °C in nitrogen, and annealed (93) at a temperature of 800 °C in nitrogen to form a strontium bismuth tantalate layered surperlattice material (30, 60). A second electrode (32, 77) is deposited and then the device is patterned (95) to form a capacitor (16, 72), and a second anneal (96) is performed at a temperature of 800 °C in nitrogen. Alternatively, the second anneal may be performed in oxygen at a temperature of 600 °C or less. In this manner, a high electronic quality thin film (30, 60) of a layered superlattice material is fabricated without a high-temperature oxygen anneal. |