| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421a0d73134b370f04687238dd708a24 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2333-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-1173 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G5-0525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G5-0578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-167 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-05 |
| filingDate |
1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e73a598bf61899046c4359849680bec0 |
| publicationDate |
1998-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9856513-A1 |
| titleOfInvention |
Photosensitive organosilicon films |
| abstract |
A process for making a two-component plasma-deposited photo-oxidizable organosilicon film on a substrate from a silicon donor and an organic precursor. Subjecting selected areas of the film to photo-oxidation allows selective etching of the non-photo-oxidized or photo-oxidized areas of the film. The process is used as a resist for patterning substrates in the fabrication of solid-state devices. It is of particular use in patterning heat sensitive substrates and accomplishing microlithography in a completely sealed vacuum process. The process allows photo-oxidation with ultraviolet light at wavelengths closer to visible light than that for conventional photoresists. The processed film exhibits selective wetting properties between the non-photo-oxidized and photo-oxidized areas of the film. |
| priorityDate |
1997-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |