| abstract |
A method of forming low dielectric constant insulation (14) between those pairs of conductive lines (12), of a level of interconnection for integrated circuits, having a gap of about 0.5 microns or less by depositing a fluid material containing insulating solids, such as a silicate, and drying said fluid material at a temperature and time so as to create, in the gap (31), a microporous material containing a gas with a dielectric constant of slightly above 1 or a large void whose dielectric constant is slightly greater than 1. Preferably the insulating solid is tetraethylorthosilicate. The resultant method forms an insulating material in the gaps of the conductive lines which has porosity in the range of about 0.6/um3 to about 2.0/um3 with a pore size in the range of 25 nm to 500 nm, and the density ranges from 0.01 to about 0.8 gram/cm3. The composite dielectric constant of the porous insulating material is in the range of about 1.1 to about 2.0. |