http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9744830-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f4246e8fcebf17c365aced017a04c61 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 |
| filingDate | 1997-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e54b61b43d60fcb9ab9f33fa2409d1b |
| publicationDate | 1997-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-9744830-A1 |
| titleOfInvention | High injection bipolar transistor |
| abstract | An optoelectronic semiconductor device using stimulated emission and absorption to achieve the function of detection, modulation, generation and/or amplification of light. In one embodiment, the device includes a waveguide heterojunction bipolar transistor (HBT) with substrate (10), subcollector layer (11), depleted transit layer (12), base layer (13, 14), emitter layer (15), with collector, base, emitter electrodes (18, 17, 16) respectively, biased in the active mode where the minority carrier concentration in the base is designed with bandgap engineering to optimize optical gain in this region. This HBT configuration allows optical modulation at considerably higher frequencies and/or with improved efficiency compared to the prior art, and is particularly suited to the fabrication of direct or external modulated wideband fiber optic links. |
| priorityDate | 1996-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.