| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61080e1b5f97a1c2066cddcf8a2e877b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a06f4e98ce1abc652036dcc739b7350
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_115d492b401d7e8acacb0ded17601d20 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1996-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08a6d1b3f44f0480777e057469de9bd1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61fa8e068b8d823f562c5e04bee4a221 |
| publicationDate |
1996-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9641412-A2 |
| titleOfInvention |
Monolithic class d amplifier |
| abstract |
A monolithic integrated circuit (1.75) is mounted in a speaker cabinet (1.71) to drive the voice coil (1.74) of the speaker (1.70). The monolithic integrated circuit may be a class D amplifier (1.10), and is at least a half-bridge or full bridge power MOSFET device. Structures and process for forming the mos switching devices (2.20) of the bridge driver circuits are disclosed. Also disclosed is the N+ buried layer (4.14) of the QVDMOS transistors (4.43) of the bridge circuits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1112617-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1112617-A1 |
| priorityDate |
1995-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |