http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9628586-A1

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filingDate 1995-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cdd4b050400fbee73244ab313d0bf89
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publicationDate 1996-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-9628586-A1
titleOfInvention Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
abstract A method of forming a titanium nitride film onto a semiconductor substrate (11) includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate (11) heated to a temperature of 400 °C to about 500 °C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.
priorityDate 1995-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 35.