http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9628586-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b8a1016e9db3dd70712d4622ba66440 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
filingDate | 1995-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cdd4b050400fbee73244ab313d0bf89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9de9f870f6a2f577282069e5ee694fb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cef493fbd25814da2b6fcd667119a601 |
publicationDate | 1996-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-9628586-A1 |
titleOfInvention | Plasma enhanced chemical vapor deposition of titanium nitride using ammonia |
abstract | A method of forming a titanium nitride film onto a semiconductor substrate (11) includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate (11) heated to a temperature of 400 °C to about 500 °C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members. |
priorityDate | 1995-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.