http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9613059-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e5af887ce5da370d1c2b840f9b51f1b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-66 |
| filingDate | 1995-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8105bb6ab2ed074bdce4bf56a1c2437 |
| publicationDate | 1996-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-9613059-A2 |
| titleOfInvention | Hermetically sealed microwave integrated circuit package with ground plane fused to package frame |
| abstract | A hermetically sealed microwave integrated circuit package (100) includes a motherboard (102) with a ground plane (104) of aluminum-silicon alloy, a plastic/ceramic composite dielectric layer (108), a copper-nickel-gold upper layer (110), and a hard aluminum frame (122). The alloy for the ground plane is selected to allow fusion with aluminum containing less than 1 % silicon to create a hermetic seal. The ground plane is fashioned to beyond the interior and upper layers, forming a welding flange (106) that circumscribes the perimeters of the interior and upper layers. Recesses (138, 140, 142, 144, 146, and 148) are cut into the dielectric to expose the ground plane. Active devices (112 and 114) and microwave integrated circuits (MICs) are disposed within the recesses and mounted on the ground plane. The metallized upper layer is etched and patterned to create a microwave integrated circuit. The alloy flange is laser-welded to the annular lower surface of a frame made of aluminum containing less than 1 % silicon, so that the interior plastic layer, the metallized upper layer, and all active devices are within the frame. A cover (128) is made from an aluminum-silicon alloy that is selected to fuse with aluminum containing less than 1 % silicon, so as to form a hermetic seal. The cover is laser-welded to the upper annular surface of the frame. When both the flange and the cover are fused with the frame, the active devices are hermetically sealed within the frame. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7756503-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2312091-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2312091-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1182704-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19701337-C2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2466638-A3 |
| priorityDate | 1994-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.