http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9611499-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d328b04d215c257fab86d9b4ca91d683 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0033 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 |
| filingDate | 1995-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cec1f153fadc937fbe9eb58ea009ac1 |
| publicationDate | 1996-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-9611499-A1 |
| titleOfInvention | Monolithic light emitting diode arrays and display assemblies based thereon |
| abstract | Monolithic semiconductor light emitting diode (LED) array which is in particular suited for use as basic building block of an LED display or multicolor lamp for illumination of a light modulating display panel. The present array comprises a substrate (20) and a semiconducting layer (21) situated thereon in which two or more metal-insulator or p-i-n type LEDs are formed. The first of said LEDs has a first active region (D1) which is compensated by a first group of impurities and has a first metal Schottky contact (24). Said LED further comprises a first conductive region (23.2) which has a first ohmic contact and is situated adjacent to said first active region (D1). The second LED comprises a second active region (D2) which is compensated by a second group of impurities and has a second metal Schottky contact (25), and a conductive region (23.3) which has a second ohmic contact and is situated adjacent to said second active region (D2). The active regions (D1, D2) of these two LEDs are formed by means of laterally varied impurity introduction into the semiconducting layer (21) such that - if a bias is applied between said ohmic metal contacts and Schottky contacts - electrical charges are injected from said ohmic metal contacts into said conductive regions. From there the charges are transported primarily parallel to the substrate plane into said first or second active regions where they lead to impurity-induced multicolor electroluminescence. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102005055997-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138583-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7180252-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7358929-B2 |
| priorityDate | 1994-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.