| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70ca3ea7752cc2ae9b2687d93d702a99 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1993-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a830c9f4931a4cde952d9ed0010933b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f55ea9aa41046c72623ebcac82e7c7a |
| publicationDate |
1994-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9405041-A1 |
| titleOfInvention |
Antifuse structure and method for forming |
| abstract |
An antifuse for programmable integrated circuit devices is formed above a refractory metal on a thin native oxide layer and comprises an amorphous compound resulting from a PECVD deposition using a combination of silane gas and nitrogen. After formation of the amorphous antifuse layer, the layer is implanted with an atomic species such as argon. The thin oxide layer is formed on the surface of a refractory metal, therefore the process of forming the oxide is slow, the oxide is of even thickness, and the thickness can be controlled precisely. In a preferred embodiment, a second thin oxide layer is formed above the doped amorphous layer. The oxide layers significantly reduce the leakage current of an unprogrammed antifuse. Because of these thin oxide layers and the implantation step, the amorphous layer may be as thin as 200A. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE36893-E
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5913138-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0823733-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5573970-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5493146-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5789764-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9633511-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0823733-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9633511-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5663591-A |
| priorityDate |
1992-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |