http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9317459-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50e6fee10adc7878b9b2f0bb19214525 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1993-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56666473d158a831c16d95e5a93cb5a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_490fd05a8688d32d7c2fe8dcea9e3448 |
| publicationDate | 1993-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-9317459-A2 |
| titleOfInvention | Process for producing a semiconductor structure and semiconductor structure produced according to this process |
| abstract | A vertical semiconductor component (14) may be integrated on a common semiconductor body (1) together with lateral semiconductor components (13) the lateral semiconductor components (13) being insulated from the vertical semiconductor component (14) by means of a pn-junction. One of the inconvenients of this type of insulation is that much space is needed for spreading the space charge region of the pn-junction. It is therefore advantageous to insulate in another manner according to which partial structures (7) containing lateral semiconductor components (13) are laterally surrounded by insulating walls (6). These walls extend from a first surface (2) of the semiconductor body (1) down to a determined depth thereof; in the area of the partial structures (7), the semiconductor body (7) has a second surface (3) that reduces its thickness, in the manner of a recess (9) that extends up to the insulating walls (6). Several vertical components may be integrated in the semiconductor body outside the partial structures (7). |
| priorityDate | 1992-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.