| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61080e1b5f97a1c2066cddcf8a2e877b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03M1-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2200-294 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K5-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03G1-0082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03M1-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F3-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F3-262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C27-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0214 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03M1-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03M1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K7-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K5-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F3-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03M1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-52 |
| filingDate |
1992-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c23bf5c8267954c54d9091fd86378275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_033c6942bd03a30e01c5b8d3c8581c71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f04c239a4ff1fd57beb17fe274f176f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7a6027796b07009e823a0fa6b252163
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e55a5875eb7e66ee84ec6ff5ff6b2e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48939c79b2f1945f5c77de8da48e95a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7aa7c39c4358c6efbccf189e43cadc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_520da8741d9937c04325ebf747959dbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_868624ee4e66cf13c6604192a68c4ac7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99a8569a7c1f9a191f94a4133c65bc48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bedad12f48a2b71ae52a5dd91b6e9b4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98728d8c61642f12bcbe2acf7ce3294a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3e6b1a39b74aebbb2d8a6d3ae9ead21 |
| publicationDate |
1993-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9309599-A2 |
| titleOfInvention |
Analog-to-digital converter and method of fabrication |
| abstract |
A two-step analog-to-digital converter (300) and BiCMOS fabrication method to make the converter. The fabrication method provides pseudosubstrate isolation of digital CMOS devices from analog devices. The converter uses NPN current switching in a flash analog-to-digital converter (306) and in a digital-to-analog converter (310) for low noise operation. CMOS digital error correction (318) and BiCMOS output drivers (320) provide high packing density plus large output load handling. Timing control (330) aggregates switching events and puts them into intervals when noise sensitive operations are inactive. The fabrication method uses a thin epitaxial layer with limited thermal processing to provide NPN and PNP devices with large breakdown and Early voltages. Laser trimmed resistors provide small-long term drift due to dopant stabilization in underlying BPSG and low hydrogen nitride passivation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9009505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9909491-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0886382-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11501750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7696905-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113281591-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2481701-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113281591-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2764714-A1 |
| priorityDate |
1991-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |