| abstract |
A semiconductor component may be manufactured by forming in a surface of a silicon body (1) a number of recessed surface portions having essentially plane bottom surfaces and a predetermined depth, deposing on said surface, including said recesses, a diamond layer (3) having a thickness exceeding the depth of said recessed surface portions, said diamond layer having first surface parts (12a, 12b) adjoining the bottoms of said recesses, bonding said silicon body to said substrate with said diamond layer facing the substrate, removing parts of said silicon body distant from said substrate down to a plane (C-C) determined by the surfaces of said first parts (12a, 12b) of said diamond layer. |