| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02019 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1991-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb66bb55bb0e53b15a520bc5db9a07f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_219f4b439fca9d37de0df1892dc53923
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb4531a77f1d5bd3e5dcbcc97ab2b5ea |
| publicationDate |
1992-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9201309-A1 |
| titleOfInvention |
Process for the thin etching of substrates |
| abstract |
In a process for the thin etching of substrates which can be etched by chemical etching agents, a predeterminable substrate thickness is obtained with an unaffected single-crystal grid structure of the substrate in that the substrate is irradiated during the etching process by radiation impinging substantially perpendicularly to its surface, the substrate consists of a radiation absorbent material and the wavelength of the main component of the radiation is such that the absorption length of the radiation of this wavelength in this substrate material is greater than the desired substrate thickness. |
| priorityDate |
1990-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |