| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_628bef798a6501c9051b5bd6c61fcd03 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-0838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F30-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F130-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F136-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F130-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F30-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F30-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1990-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8399b1d053881b9caf28ec62cd09a41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e66afdef0ea1d46a9992b041c777ad9 |
| publicationDate |
1991-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9107446-A1 |
| titleOfInvention |
Anionically polymerizable monomers, polymers thereof, and use of such polymers in photoresists |
| abstract |
Anionically polymerizable monomers containing at least one silicon or titanium atom for polymeric photoresists for use in microlithography. The monomers are of formula (I), wherein A is -H or -CH=CH2; X is a strong electron withdrawing group; Y is a strong electron withdrawing group containing at least one silicon or titanium atom. Preferably Y is (II), wherein n is 1-5 and R?2, R3 and R4¿ are C¿1?-C10 alkyl. A particularly preferred monomer is 3-trimethylsilylpropyl 2-cyanoacrylate. Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. The imaging layer may be applied over a planarizing layer to form a multilayer photoresist. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3144072-A1 |
| priorityDate |
1989-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |