http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9004265-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7cfa1e5ae136e9007d398fa5640085ca |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 |
| filingDate | 1989-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8a1fac35900cc3355e40b649f03a6b4 |
| publicationDate | 1990-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-9004265-A1 |
| titleOfInvention | MODULATED MULTI-QUANTUM WELL COLLECTOR FOR HgCdTe PHOTODIODES |
| abstract | A HgCdTe heterojunction photodiode and array of same has a multilayered, modulated multi-quantum well (MMQW) structure (12) interposed between a radiation absorbing base region (10) and an overlying current collector region (18). The MMQW structure is comprised of a plurality of alternating thin layers of wide bandcap CdTe (14) and narrow bandgap HgTe (16) material which together form a plurality of quantum wells in the conduction band. The width of each of the wells is defined by the physical thickness of a corresponding one of the HgTe layers, the width being modulated or varied across the MMQW structure. This variation in HgTe layer width varies the energy of the quantized electronic ground state of each well, wider width wells being associated with higher-lying, less tightly bound, ground states. The thickness or the HgTe layers, and hence the width of each of the wells, is selected such that the ground energy levels of each of the wells will ''line-up'' within a range of reverse bias potential. A transmission resonance is thus provided for minority charge carriers at their band edge in the base region while simultaneously blocking the transmission of other charge carriers. This results in the unimpeded flow of photocurrent across the device heterojunction while suppressing the tunnelling and g-r components of the dark current. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007063102-A1 |
| priorityDate | 1988-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.