| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f82b25001b8c64e3b2c05b4e3dd4a3c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-169
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-026 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
1988-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c25a80b122fcc25f3f3e22cb0586e43c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_409219ab7e0bb012cf6e446a944e9143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c7043e4cc34b26f192893d2ad7599a4 |
| publicationDate |
1989-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-8904594-A1 |
| titleOfInvention |
Omcvd of iii-v material on silicon |
| abstract |
A method of OMCVD heteroepitaxy of III/V (GaAs) material on a patterned Si substrate is described wherein heteroepitaxy deposition occurs only on the exposed Si surfaces and nowhere else. |
| priorityDate |
1987-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |