| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate |
1988-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43c52c657e3a66739b93948e04b543e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f8493f2454ce3ba6d2ef429e3686334 |
| publicationDate |
1989-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-8902162-A1 |
| titleOfInvention |
Schottky diode |
| abstract |
A Schottky diode comprises a gallium arsenide substrate (5) on which an epitaxial monocrystalline layer of gallium arsenide (6) is applied. In order to form a Schottky contact, an epitaxial monocrystalline layer of erbium arsenide or ytterbium arsenide (7) is applied to this layer. A covering layer of highly doped gallium arsenide (8) is then applied. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6639410-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6456087-B1 |
| priorityDate |
1987-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |