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filingDate 1986-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e226141389598d0f42f7f414522b4c5
publicationDate 1986-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-8606360-A1
titleOfInvention Process for preparing high purity aluminum nitride
abstract Process for producing high purity aluminum nitride by reacting aluminum sulfide with gaseous ammonia or gaseous nitrogen and hydrogen at a temperature above 1100oC. When using gaseous ammonia the preferred reaction conditions are at about 1200oC to 1500oC and at about atmospheric pressure for about 2-30 hours. When gaseous nitrogen and hydrogen are used the preferred reactin conditions are at about 1200oC to 1750oC and at pressures above atmospheric for about 2-30 hours. A high purity, low oxygen containing, free flowing powder is produced.
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