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filingDate 1985-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b952b497c93461bb4916435487aaf868
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publicationDate 1986-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-8603333-A2
titleOfInvention High-performance trench capacitors for dram cells
abstract A trench version of a high-capacitance (Hi-C) capacitor for a dynamic random-access-memory (DRAM) cell is made utilizing a doping technique. A shallow highly doped trench region is thereby formed. At the same time, selected lateral surface portions (24) of the structure are also thereby highly doped. These surface portions permit a direct electrical connection to be easily made between the capacitor and a subsequently formed adjacent access transistor.
priorityDate 1984-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.