| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_058e0be30e00d53858c67167df60aed5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-93 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167 |
| filingDate |
1985-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b7bf7904e3a83925d1f0c3a4b3420c7 |
| publicationDate |
1985-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-8503598-A1 |
| titleOfInvention |
Integrated circuit having dislocation-free substrate |
| abstract |
An integrated circuit bulk substrate having a zinc blende or Wurtzite crystalline structre is alloyed with a material having atoms that replace atoms of the host semiconductor. The alloyed atoms have a bond length with the nearest neighboring host atoms that is less than the bond length of the host atoms. The number of bonded alloyed atoms is small compared to the number of host atoms so as not to substantially affect electronic conduction properties of the host material, but is large enough to virtually eliminate dislocations over a large surface area and volume of the host material on which active semiconductor devices are located. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2215514-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0279989-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4970174-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0419256-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0279989-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110359218-A |
| priorityDate |
1984-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |