http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-8102348-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4f45ecc4568ed2971b4df5867be5856 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F3-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F3-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F1-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03L5-00 |
| filingDate | 1980-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f9a1360a64fb069a82a0c80ebe99055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f402e79300d75f8b533ec3b301b6d794 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa7793de8ce3bbcc26623fd556686ce0 |
| publicationDate | 1981-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-8102348-A1 |
| titleOfInvention | Bandgap voltage reference employing sub-surface current using a standard cmos process |
| abstract | A bandgap voltage reference employing only subsurface currents which may be fabricated using a standard CMOS process. The reference includes first and second vertical bipolar transistors (10, 12) having common collectors formed in an integrated circuit substrate. A first resistor (16) connects the emitter of the first transistor (10) to ground potential (20). A second resistor (22) connects the emitter of the second transistor (12) to a reference node (24) while a third resistor (26) connects the reference node to ground. A differential amplifier (28) has a positive input connected to the reference node (24), a negative input connected to the first transistor emitter and an output (30) connected to the bases of the first and second transistors and also providing the reference voltage output. In a preferred form the output of the differential amplifier is buffered by a third transistor (32) and coupled by a resistive divider (36, 38) to the first and second transistor bases so that the reference voltage may be selected at any scalar of the basic bandgap voltage. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6307426-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3336434-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0070315-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0070315-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0192147-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0329247-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0336498-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9015378-A1 |
| priorityDate | 1980-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.