http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023277048-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_696ca0ae93d5cf5a686273601361781f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2022-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d208478c2f02fe7ae60cdd0856909c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19c38fd722cb053eda940510dc76660a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd32e47035e12ca75b6640259d3d22e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce472ba93399eebc38f2d663dee16c7f |
| publicationDate | 2023-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2023277048-A1 |
| titleOfInvention | Etching composition for semiconductor substrate for memory element and method for manufacturing semiconductor substrate for memory element using same |
| abstract | Provided is an etching composition for a semiconductor substrate for a memory element capable of providing a semiconductor substrate for a memory element having improved performance.　The etching composition for a semiconductor substrate for a memory element comprises: (A) an oxidizing agent; (B) a fluorine compound; and (C) a metal tungsten corrosion inhibitor, wherein (C) the metal tungsten corrosion inhibitor contains at least one selected from the group consisting of an ammonium salt represented by formula (1) and a heteroaryl salt having a C14-C30 alkyl group. |
| priorityDate | 2021-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 265.