| abstract |
Provided is a photoelectric conversion element material that is for an imaging element and that contributes to production of a photoelectric conversion element that is for an imaging element and that exhibits excellent dark current and external quantum efficiency. The present invention uses a photoelectric conversion element material that is for an imaging element and that contains a compound including a backbone that has a cove region in the molecular structure thereof and that optionally includes a substitution. However, examples of the compound does not include unsubstituted dibenzo[g,p]chrysene. Preferable as the abovementioned material is a photoelectric conversion element material that is for an imaging element and that has a specific structure represented by formula (1). |