| abstract |
Disclosed Is a method for forming a metal-containing film on a substrate comprising the steps of: exposing the substrate to a vapor of a film forming composition that contains a metal-containing precursor; and depositing at least part of the metal-containing precursor onto the substrate to form the metal-containing film on the substrate through a vapor deposition process, wherein the metal-containing precursor is a pure M(alkyl-arene) 2 , wherein M is Cr, Mo, or W; arene is wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each is independently selected from H, C 1 -C 6 alkyl, C 1 - C 6 alkenyl, C 1 -C 6 alkylphenyl, C 1 -C 6 alkenylphenyl, or -SIXR7R8, wherein X is selected from F, Cl, Br, I, and R 7 , R 8 each are selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkenyl. |