| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ff81a650b70e913d3b2524b45e4c7320
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e400c7cafe4d27546b9127d5fdd3312b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0272 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 |
| filingDate |
2022-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52b683791e3bcca1441db6546a44892d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07aa7084ebf87f9034a140f92d36d84c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2872ec612849161261b5226b28e0b534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_346a41ba562a31aac21ce4aa23afa997
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee00936674174358fc9d44c618bfb0a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ede96b440aeb9d94440e259f918844b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f0805e7e120461b19bf1a6c0c7d786f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dea97b38eb4910be8d6e436021642b10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d76bbf1c16dc4d9818c58781b3583dda |
| publicationDate |
2023-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2022246074-A3 |
| titleOfInvention |
Solid-state amorphous selenium avalanche detector with hole blocking layer |
| abstract |
A solid-state photomultiplier with a high- k dielectric hole blocking layer (HBL) is provided. The HBL may include a n-type material. The photomultiplier may comprise an amorphous selenium (a-Se) bulk layer. The HBL may be a non-insulating layer. The photomultiplier may also comprise an electron blocking layer (EBL). The EBL may comprise a p-type material. The p-type material may also have a high k dielectric. The a-Se layer may be sandwiched between the HBL and the EBL. Methods for manufacturing a solid-state photomultiplier are also provided. |
| priorityDate |
2021-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |