| abstract |
Disclosed in the present application is an array substrate. The array substrate comprises a semiconductor layer, wherein a PIN photodiode and an active region are integrated on the semiconductor layer, and the PIN photodiode comprises a P-type semiconductor region, an N-type semiconductor region, and an I-type semiconductor region which is arranged between the P-type semiconductor region and the N-type semiconductor region. A gate current is introduced at the position corresponding to the I-type semiconductor region, so as to achieve the aim of improving the photosensitivity. |