| abstract |
Provided is a semiconductor device having good electrical characteristics. Provided is a highly reliable semiconductor device. This semiconductor device has a first transistor and a second transistor. The first transistor has a first semiconductor layer, a first insulation layer, a second insulation layer, and a first gate electrode laminated in this order. The first gate electrode has a region that overlaps the first semiconductor layer. The second transistor has a second semiconductor layer, a second insulation layer, and a second gate electrode laminated in this order. The second gate electrode has a region that overlaps the second semiconductor layer. |