| abstract |
Semiconductor channel layers vertically aligned and stacked, separated by a work function metal and a gate dielectric partially surrounding and physically separating the work function metal from each, a first portion of the work function metal directly contacts a vertical sidewall of each layer. A first set and a second set of semiconductor channel layers vertically aligned and stacked, separated by a work function metal, a gate dielectric partially surrounding and physically separating the work function metal from each, a first portion of the work function metal between the first set and the second set directly contacts a sidewall of each layer. Forming an initial stack of alternating layers of a sacrificial and a semiconductor channel vertically aligned and stacked, forming a vertical opening creating a first stack of nanosheet layers and a second stack of nanosheet layers, and exposing vertical side surfaces of the alternating layers of both stacks. |