| abstract |
Provided is an insulating resin composition excelling in embeddability in metal wiring patterns, semiconductor IC, etc., even when highly filled with an inorganic filler. The insulating resin composition comprises an epoxy resin (A), a metal phosphinate (B) represented by general formula (1) below, and an inorganic filler (C), wherein the content of the inorganic filler (C) is 50 parts by mass or more per 100 parts by mass of a nonvolatile component of the insulating resin composition. (In general formula (1), R1 and R2 each independently represent a hydrogen atom, a linear or branched C1-16 alkyl group, a C5-8 cycloalkyl group, or a C6-10 aryl group, M is calcium, aluminum, or zinc, and m is an integer from 1-4.) |